Two Highly Reliable and High-Speed SRAM Cells for Safety-Critical Applications

In this paper, we propose two Highly Reliable and High-Speed SRAM cells, namely HRHS18T and HRHS18T_EV. The proposed cells can be applied to safety-critical applications due to their excellent self-recoverability from node-upsets. Meanwhile, the proposed cells have smaller read/write delay than other state-of-the-art hardened SRAMs. Simulation and quantitative calculation results show that, the proposed HRHS18T cell can save 65.05% read time and 38.12% write time at the cost of 51.89% power consumption and 32.69% area on average compared with alternative SRAMs. The results also show that the HRHS18T_EV cell can save 65.05% read time and 73.28% write time at the cost of 51.89% power consumption and 32.69% area on average compared with alternative SRAMs.