2-mW-Output Power Uni-Traveling-Carrier Photodiodes in 300-GHz-Band

被引：5
|
作者：
Ohara, Takahiro [1 ]
Ishibashi, Tadao [2 ]
Kawamoto, Yuma [1 ]
Tojo, Mizuki [3 ]
Maekawa, Keisuke [1 ]
Nagatsuma, Tadao [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka, Japan
[2] Wavepackets LLC, Kawasaki, Kanagawa, Japan
[3] Osaka Univ, Sch Engn Sci, Toyonaka, Osaka, Japan
来源：
2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC | 2023年
关键词：
terahertz (THz) wave; uni-traveling-carrier photodiode (UTC-PD); high power; SiC substrate;
D O I：
10.1109/APMC57107.2023.10439767
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a uni-traveling-carrier photodiode (UTC-PD) fabricated on a SiC substrate in order to increase saturated output power by improving the thermal management. The realized UTC-PD chip is implemented on an all-silicon waveguide platform and packaged. For a single photodiode, it is experimentally validated with record output power of over 2 mw in 300-GHz-band.
引用
收藏
页码：676 / 678
页数：3
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