Contact holes in vertical electrode structures analyzed by voltage contrast-SEM and conducting AFM

Soaring demands of multi-stacked memory devices request urgent development of backside contact electrode technologies, such as high aspect ratio etching, metallization, and inspection methods. Especially the complex metal contact process should be monitored for each manufacturing step to filter the defective samples and to maintain the high yield of production. Among the inspection methods for detecting the electrical connections, there is voltage contrast (VC)-SEM and conducting AFM (C-AFM). In this report, we investigated the two in-spection methods for testing designed samples with different contact hole states. The VC-SEM data shows the contrast variation at the contact holes, from which one may discern the contact status with an optimum voltage. The C-AFM results clearly demonstrate a finite electrical current in the connected contact, while a negligible current in the disconnected one. Finally, we discuss insights of using the two methods for analyzing the contact hole technologies with high aspect ratios.