INFLUENCE OF N2 FLOW RATE ON THE PROPERTIES OF VANADIUM NITRIDE THIN FILMS DEPOSITED BY REACTIVE DC MAGNETRON SPUTTERING

被引：0

作者：

Prathumsit, Jedsada ^{[1
]}

Phae-ngam, Wuttichai ^{[1
]}

Chaikeeree, Tanapoj ^{[2
]}

Mungkung, Narong ^{[2
]}

Lertvanithphol, Tossaporn ^{[3
]}

Horprathum, Mati ^{[3
]}

Gitgeatpong, Ganatee ^{[1
]}

机构：

[1] Phranakhon Rajabhat Univ, Fac Sci & Technol, Phys Program, Bangkok 10220, Thailand

[2] King Mongkuts Univ Technol Thonburi, Fac Ind Educ & Technol, Dept Elect Technol Educ, Bangkok 10140, Thailand

[3] Natl Elect & Comp Technol Ctr, Optoelectrochem Sensing Res Team, Pathum Thani 12120, Thailand

来源：

SURANAREE JOURNAL OF SCIENCE AND TECHNOLOGY | 2023年 / 30卷 / 04期

关键词：

Reactive DC magnetron sputtering; thin film; vanadium nitride; TITANIUM;

D O I：

10.55766/sujst-2023-04-e02237

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Vanadium nitride (VN) thin films have been deposited on silicon wafer substrates by reactive DC magnetron sputtering with varied nitrogen (N-2) flow rates from 5.0 to 8.0 sccm without substrate heating. The crystallinity, morphology, and optical properties of the prepared VN films were investigated by gracing-incidence X-ray diffraction (GIXRD), field emission scanning electron microscope (FE-SEM), and UV-Vis-NIR spectrophotometer, respectively. The GIXRD pattern shows that the crystal structure of the films is consistent with the face-centered cubic VN structure. An increase in N2 led to a decrease in film thickness and sheet resistance. On the contrary, the reflectance percentage tends to increase with the increase of N2 flow rate. [Copyright information to be updated in the production process].

引用

页码：1 / 5

页数：5

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