High-Power Semiconductor Laser Fabricated by Standard Photolithography for Direct Modulation

被引：4

作者：

Li, Jing ^{[1
,2
]}

Wang, Xueyou ^{[1
,2
]}

Xu, Yuanbo ^{[1
,2
]}

Dong, Fengxin ^{[3
]}

Du, Fangling ^{[1
,2
]}

Wang, Hailing ^{[1
,3
]}

Zheng, Wanhua ^{[1
,4
,5
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100032, Peoples R China

[3] Weifang Acad Adv Optoelect Circuits, Weifang 261021, Shandong, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[5] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 06期

关键词：

Power lasers; Gratings; Semiconductor lasers; Modulation; Oscillators; Bandwidth; Reflection; Semiconductor laser; single-mode; high-power; direct modulation; DISTRIBUTED-FEEDBACK LASERS; PERFORMANCE; ARRAY;

D O I：

10.1109/LPT.2023.3240413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power semiconductor laser with an integrated master oscillator power amplifier (MOPA) based on the surface-slotted structure is demonstrated. The lasing wavelength of 1.5 mu m is achieved by using a group of micron-level slots fabricated by standard photolithography. The laser exhibits continuous-wave output power of up to 225 mW in the single mode operation at room temperature. At the maximum output power, the modulation bandwidth is larger than 7 GHz, demonstrating the excellent performance of the MOPA based on the surface-slotted structure.

引用

页码：289 / 292

页数：4

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