High-Power Semiconductor Laser Fabricated by Standard Photolithography for Direct Modulation

被引：4
|
作者：
Li, Jing [1 ,2 ]
Wang, Xueyou [1 ,2 ]
Xu, Yuanbo [1 ,2 ]
Dong, Fengxin [3 ]
Du, Fangling [1 ,2 ]
Wang, Hailing [1 ,3 ]
Zheng, Wanhua [1 ,4 ,5 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100032, Peoples R China
[3] Weifang Acad Adv Optoelect Circuits, Weifang 261021, Shandong, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[5] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 06期
关键词：
Power lasers; Gratings; Semiconductor lasers; Modulation; Oscillators; Bandwidth; Reflection; Semiconductor laser; single-mode; high-power; direct modulation; DISTRIBUTED-FEEDBACK LASERS; PERFORMANCE; ARRAY;
D O I：
10.1109/LPT.2023.3240413
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power semiconductor laser with an integrated master oscillator power amplifier (MOPA) based on the surface-slotted structure is demonstrated. The lasing wavelength of 1.5 mu m is achieved by using a group of micron-level slots fabricated by standard photolithography. The laser exhibits continuous-wave output power of up to 225 mW in the single mode operation at room temperature. At the maximum output power, the modulation bandwidth is larger than 7 GHz, demonstrating the excellent performance of the MOPA based on the surface-slotted structure.
引用
收藏
页码：289 / 292
页数：4
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