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- [1] Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (04):
- [2] Investigation of the Interface Oxide of Al2O3/HfO2 and HfO2/Al2O3 stacks on GaAs (100) surfaces ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 311 - 314
- [4] Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (01):
- [6] Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
- [8] Approaches to using Al2O3 and HfO2 as gate dielectrics for CMOSFETs FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 2003, 39 (01): : 94 - 105
- [10] Nonlinear relaxational polarization of Al2O3 and HfO2 2015 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (CEIDP), 2015, : 640 - 643