On the structural and electrical properties of MgFe2O4, MgMn0.2Fe1.8O4, and Mn3O4

被引:3
|
作者
Farshidfar, F. [1 ]
Lapolla, M. [1 ]
Fattahi, A. [1 ]
Ghandi, K. [1 ]
机构
[1] Univ Guelph, Dept Chem, Guelph, ON N1G 2W1, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Ceramics; Disordered systems; Inorganic materials; Anisotropy; Electrical transport; SPINEL; RIETVELD;
D O I
10.1016/j.heliyon.2023.e21677
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Charge carrier transport via donor/acceptor pairs of similar elements is dominant in n-type MgFe2O4 and p-type Mn3O4 spinels. The temperature-independent activation energy in the form of the nearest neighbor hopping model is applied for Fe2+/Fe3+ pairs of cubic MgFe2O4 spinel in the temperature range of 423-523 K (150-250 degrees C). At such high temperatures, even for this relatively narrow temperature range, the constant energy barrier deviates to a variable range hopping energy barrier in the case of Mn3O4, due to Jahn-Teller active octahedral sites. Replacing 10 mol% of Fe at octahedral sites with Mn has significantly increased the electron hopping energy barrier and electrical conductivity of MgFe2O4, while keeping the nearest neighbor hopping model dominant. The observed high energy barrier is due to donor/acceptor pairs of different elements (Mn/Fe). Due to a lack of structural distortion, deviation from the nearest neighbor hopping mechanism with temperature-independent activation energy was not observed. Rietveld refined XRD patterns and FT-IR spectra are utilized to support the argument on electrical con-ductivity mechanisms.
引用
收藏
页数:9
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