SILICON SURFACE PATTERNING BY GLOW DISCHARGE PLASMA

被引：2
|
作者：
Petrova, A. V. [1 ,2 ]
Bogoslovtseva, A. L. [1 ,2 ]
Starinskiy, S. V. [1 ,2 ]
Safonov, A. I. [1 ]
机构：
[1] Russian Acad Sci, Kutateladze Inst Thermophys, Siberian Branch, Novosibirsk, Russia
[2] Novosibirsk State Univ, Novosibirsk, Russia
来源：
JOURNAL OF APPLIED MECHANICS AND TECHNICAL PHYSICS | 2023年 / 64卷 / 03期
关键词：
glow discharge; silicon processing; oxidation; wettability; hydrophilicity; WETTABILITY; COATINGS;
D O I：
10.1134/S0021894423030136
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
The possibility of changing the silicon surface morphology at certain glow discharge parameters is shown. It is established that oxidation is the main process influencing the surface morphology during glow discharge plasma treatment. As a result of processing in the investigated parameter range, various stages of the surface oxidation process are observed: the formation of a uniform oxide layer and the formation of nano- and microstructures of silicon oxide. It is shown that these processes lead to surface modification, which acquires stable hydrophilic and superhydrophilic properties.
引用
收藏
页码：472 / 477
页数：6
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