Crosstalk reduction between microstrip lines using TL-shaped defected microstrip structure

Aiming at the problem of far-end crosstalk between microstrip lines, a method to improve crosstalk by using the TL-shaped defective microstrip structure (DMS) is proposed. This method optimizes the ratio of the capacitive coupling and the inductive coupling between coupled microstrip lines by etching TL-shaped DMSs on the microstrip lines, reducing the strength of electromagnetic coupling, thereby achieving an improvement in crosstalk. The quantitative equivalent model, S-parameters, and full-wave EM simulations are used to analyze the frequency response of the TL-shaped DMS and crosstalk between the microstrip lines. The results of High Frequency Structure Simulator software simulation and sample texts show that the TL-shaped DMS can effectively improve the far-end crosstalk while ensuring the transmission of signals on the microstrip line. In the frequency range of 0-8 GHz, the far-end crosstalk can be improved by about 11 dB, and the maximum can be improved by 42 dB. Compared with other DMSs, the TL-shaped DMS has better crosstalk improvement effect and practical application potential.