Synthesis, characterization, and dielectric properties of SBN ferroelectric matrix doped with Eu2O3

Recently, ferroelectric behaviors have been optimized to suit some ecological and electronic applications, such as nonvolatile random-access memories. Throughout this study, europium has been proposed to enhance the structure density of SrBi2-xEuxNb2O9 ceramics (0 <= x <= 0.50). Indeed, to examine their suitability as layered perovskite ferroelectric materials in the electronic industry, the effect of europium on phase structure, grain size and morphology, and mainly dielectric behaviors, were investigated. Distinct solid-solutions were prepared for which bismuth was substituted in a small proportion by europium via solid-state thermal treatment at 900 degrees C. The characterization of samples has been done by X-Ray diffraction, Raman spectroscopy, FTIR spectroscopy, density measurements, and dielectric behavior studies. Substitution of bismuth by europium reduced dielectric loss and constant, owing to the lower chemical bonds of europium (Eu-O) compared to bismuth (Bi-O). This study demonstrated that SrBi2-xEuxNb2O9 with x up to 0.40 had an electrical profile adequate for ferroelectric application and could be used in FeRAM applications.