Cadmium Magnesium Telluride for Next-Generation X-Ray Free Electron Laser, Synchrotron, and Many Other Applications

被引:1
|
作者
Chen, Henry [1 ]
Kutcher, Sue [1 ]
Wen, Julie [1 ]
Trivedi, Sudhir [1 ]
Cheng, Jing [2 ]
Chen, Genyu [2 ]
Chakraborty, Debamitra [2 ]
Komissarov, Ivan [2 ]
Sobolewski, Roman [2 ]
机构
[1] Brimrose Technol Corp, Sparks, MD 21152 USA
[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
关键词
Cadmium magnesium telluride (Cd1-xMgxTe) semiconductors; free electron lasers; nuclear detectors; optical detectors; picosecond photoresponse; synchrotron; X-ray detectors;
D O I
10.1109/TNS.2023.3242471
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We developed a picosecond photodetector based on our Bridgman-grown and specially engineered cadmium magnesium telluride (Cd1-xMgxTe) single crystal that is sensitive to both optical and X-ray pulses for coarse timing in free-electron laser applications. Cd1-xMgxTe is a widebandgap semiconductor with potential applications, not only in optoelectronics, but also in particle physics as an intense pulse radiation detector for bremsstrahlung, X-ray/gamma-ray radiation, thermal neutrons, and medical imaging. For femtosecond optical and X-ray cross correlation, the material must have a very short lifetime, a condition that is opposite to that required for nuclear spectroscopy applications. At the same time, the material also needs to have a very low bulk leakage current, in the 10-90 nA range for voltages to even 1000 V. Hence, the ability to tailor or engineer the material is very crucial. Picosecond response and the crystal growth of this specially engineered Cd1-xMgxTe material are presented. Other characterization and transient measurements are discussed along with room-temperature semiconductor detector performance for other nuclear radiation detection applications.
引用
收藏
页码:286 / 291
页数:6
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