Enhancing performance of β-Ga2O3 diodes through a NixO/SiNx/Ga2O3 sandwich structure

被引：10

作者：

Hong, Yuehua ^{[1
]}

Zheng, Xuefeng ^{[1
]}

He, Yunlong ^{[1
]}

Liu, Kai ^{[1
]}

Zhang, Hao ^{[1
]}

Wang, Xinyang ^{[1
]}

Yuan, Zijian ^{[1
]}

Zhang, Fang ^{[1
]}

Wang, Yingzhe ^{[1
]}

Ma, Xiaohua ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Lab Wide Bandgap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 976卷

关键词：

Electronic diodes; Ultra-high current density; Oxide semiconductor; Sandwich structure; SCHOTTKY-BARRIER DIODES; VERTICAL SCHOTTKY; BALIGAS FIGURE; TERMINATION; MERIT;

D O I：

10.1016/j.jallcom.2023.173062

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, we propose and investigate a novel sandwich structure composed of NixO/SiNx/Ga2O3 for the purpose of enhancing the forward current density and reducing the on-resistance in fl-Ga2O3 diodes. The fabricated sandwich Ga2O3 diode demonstrates an impressive forward current density exceeding 1 kA/cm2 under a forward bias of 2 V, surpassing previously reported Ga2O3 Schottky diodes. Furthermore, the sandwich diode exhibits a remarkably low differential specific on-resistance (Ron,sp) of 1.1 mL2 center dot cm2. These findings present a promising avenue for the design of high-current Ga2O3 power electronics.

引用

页数：6

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