Structural, Electronic, Optical, and Mechanical Properties of Cu(I)Au(III)-Based Double Perovskites: A First-Principles Study

被引:1
|
作者
Feng, Chunbao [1 ]
Luo, Xin [1 ]
Zhao, Qing [1 ]
Wu, Changhe [1 ]
Hu, Tao [1 ]
Li, Shichang [1 ]
Duan, Shengnan [1 ]
Tang, Gang [2 ]
Zhang, Gang [3 ]
Li, Dengfeng [1 ]
机构
[1] Chongqing Univ Posts & Telecommun, Sch Sci, 2 Chongwen Rd, Chongqing 400065, Peoples R China
[2] Beijing Inst Technol, Adv Res Inst Multidisciplinary Sci, 5 South St, Beijing 100081, Peoples R China
[3] ASTAR, Inst High Performance Comp, 1 Fusionopolis Way, 16-16 Connexis,North Tower, Singapore 138632, Singapore
来源
基金
中国国家自然科学基金;
关键词
Cu-based perovskites; first-principles study; mixed anions; stability; strain; HALIDE DOUBLE PEROVSKITES; SOLAR-CELLS; BAND-GAP; PB; BR; CL; SN; CS; SUBSTITUTION; ABSORPTION;
D O I
10.1002/pssr.202300128
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Herein, the structural, electronic, optical, and mechanical properties of Cu(I)Au(III)-based double perovskites using first-principles calculations are investigated. Phonon calculation results confirm that pure halide Cs2CuAuX6 (X = Cl, Br), mixed-halide Cs2CuAuBr4Cl2 and Cs2CuAuI4Br2, and strained Cs2CuAuI6 (by 3% strain) are dynamically stable. Subsequently, the optoelectronic and mechanical properties of these compounds are calculated. The calculations reveal that Cs2CuAuX6 exhibits slightly indirect-bandgap semiconducting behavior, with the bandgaps of 1.169, 1.191, and 1.355 eV from the HSE06 hybrid functional for X = Cl, Br, and I, respectively. Meanwhile, the bandgap of Cs2CuAuI6 decreases with the increase of strain from 1% to 3% (1.271, 1.148, and 1.037 eV, respectively). In addition, the results show that Cs2CuAuI4Br2 (Eg(HSE06) = 1.278 eV) has a suitable bandgap, which is close to the ideal direct bandgap. Moreover, Cs2CuAuI4Br2 exhibits strong anisotropic visible light absorption with absorption coefficients exceeding 10(5) cm(-1) and has a relatively large dielectric constant (epsilon(xx)(st) = epsilon(yy)(st) = 36.27) along the ab plane. Furthermore, its Pugh's ratio (Poisson's ratio) value of 2.94(0.35) exceeds the critical value of 1.75(0.26), indicating its ductility and potential for use in flexible electronic devices.
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页数:10
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