Accurate Condition Monitoring of Semiconductor Devices in Cascaded H-Bridge Modular Multilevel Converters

被引:4
|
作者
Asoodar, Mohsen [1 ]
Nahalparvari, Mehrdad [1 ]
Zhang, Yi [2 ]
Danielsson, Christer [3 ]
Nee, Hans-Peter [1 ]
Blaabjerg, Frede [2 ]
机构
[1] Kungliga Tekniska Hogskolan, Elect Power & Energy Syst, S-10044 Stockholm, Sweden
[2] Aalborg Univ, DK-9220 Aalborg, Denmark
[3] Hitachi Energy, Vasteras, Sweden
关键词
Temperature measurement; Semiconductor device measurement; Electrical resistance measurement; Automatic voltage control; Resistance; Monitoring; Voltage measurement; Cascaded H-bridge; condition monitoring (CM); flexible ac transmission systems (FACTS); health estimation; modular multilevel converter (MMC); online monitoring; reliability; semiconductors; JUNCTION TEMPERATURE; POWER; MOSFETS;
D O I
10.1109/TPEL.2022.3221285
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents an online condition monitoring (CM) scheme for semiconductors used in modular multilevel converters (MMCs) that comprise cascaded H-bridge submodules. The CM algorithm is based on detecting changes in the ON-state resistance of the semiconductors over time. The proposed method is shown to successfully perform a curve tracing of semiconductors in MMCs while the semiconductor junction remains at a temperature that is readily measurable and undergoes minute changes during the measurement process. The ON-state resistance value is estimated from the measured ON-state voltage drop of the semiconductors and the measured arm current. Measuring the ON-state resistance at known temperatures allows for separating temperature-dependent variations of the ON-state resistance from age-dependent variations of this parameter. Suitable methods for reducing the effect of noise on the curve-traced data are proposed, and a recursive least square estimator is used to extract the optimum ON-state resistance from the traced v(CE) - i(C) curve. Simulation results show that the proposed scheme can accurately determine the ON-state resistance of semiconductors at a known temperature and under various levels of measurement noise. Moreover, experimental results on a low-power prototype show that the proposed scheme is applicable in practice, and provides similar online curves to what a commercial curve tracer can produce offline. The experimental verification has been conducted under constant load conditions; however, the proposed methods can be used under any variable load condition as well.
引用
收藏
页码:3870 / 3884
页数:15
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