Asymmetric Non-Fullerene Acceptor Derivatives Incorporated Ternary Organic Solar Cells

被引:2
|
作者
Lan, Ai [1 ,2 ]
Zhu, Jintao [1 ,2 ]
Zhang, Zhuohan [1 ,2 ]
Lv, Yifan [1 ,2 ]
Lu, Hong [1 ]
Zhao, Ningxin [1 ]
Do, Hainam [1 ,2 ,4 ]
Chen, Zhi-Kuan [3 ]
Chen, Fei [3 ]
机构
[1] Univ Nottingham Ningbo China, Dept Chem & Environm Engn, Ningbo 315100, Peoples R China
[2] Univ Nottingham Ningbo China, New Mat Inst, Ningbo 315100, Peoples R China
[3] Northwestern Polytech Univ, Key Lab Flexible Elect Zhejiang Prov, Ningbo Inst, Ningbo 315100, Peoples R China
[4] Univ Nottingham Ningbo China, Key Lab Carbonaceous Waste Proc & Proc Intensifica, Ningbo 315100, Peoples R China
基金
中国国家自然科学基金;
关键词
organic solar cells; ternary strategy; asymmetricnon-fullerene acceptors; film morphology; energyloss; EFFICIENCY; MORPHOLOGY; PHOTOVOLTAICS; ALLOY;
D O I
10.1021/acsami.3c06981
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Incorporating ITIC derivatives as guest acceptors intobinary hostsystems is an effective strategy for constructing high-performanceternary organic solar cells (TOSCs). In this work, we introduced A-D-Atype ITIC derivatives PTBTT-4F (asymmetric) and PTBTP-4F (symmetric)into the PM6:BTP-BO-4F (Y6-BO) binary blend and investigated the impactsof two guest acceptors on the performance of TOSCs. Differentiateddevice performance was observed, although PTBTT-4F and PTBTP-4F presentedsimilar chemical structures and comparable absorptions. The PTBTT-4Fternary devices exhibited an improved power conversion efficiency(PCE) of 17.67% with increased open circuit (V (OC)) and current density (J (SC)), whereas the PTBTP-4F-based ternary devices yielded a relativelylower PCE of 16.34%. PTBTT-4F showed much bettercompatibility with the host acceptor BTP-BO-4F, so that they formeda well-mixed alloy phase state; more precise phase separation andincreased crystallinity were thus induced in the ternary blends, leadingto reduced molecular recombination and improved charge mobilities,which contributed to improved fill factors of the ternary devices.In addition, the optimized PTBTT-4F devices exhibited good performancetolerance of the photoactive layer thickness, as they even delivereda PCE of 15.25% when the active layer was as thickas up to & SIM;300 nm.
引用
收藏
页码:39657 / 39668
页数:12
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