Preparation and photocatalytic activity of ZnGa2O4-β-Ga2O3 thin films

被引：2
|
作者：
Promdet, Premrudee [1 ]
Carmalt, Claire J. [1 ]
Parkin, Ivan P. [1 ]
机构：
[1] UCL, Mat Chem Ctr, Dept Chem, 20 Gordon St, London WC1H 0AJ, England
来源：
MATERIALS ADVANCES | 2023年 / 4卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
WATER DECOMPOSITION; SINGLE-CRYSTALLINE; METHYLENE-BLUE; SOLID-SOLUTION; ZNGA2O4; REDUCTION; DEGRADATION; TIO2; CO2; DEPOSITION;
D O I：
10.1039/d2ma01016j
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnGa2O4 and ZnGa2O4-beta-Ga2O3 thin films were prepared via aerosol-assisted chemical vapor deposition (AACVD) using various ratios of the Zn and Ga precursors, resulting in the formation of amorphous ZnGa2O4 and Ga2O3. The formation of crystalline zinc gallate and heterostructure zinc gallate thin films was achieved by annealing the resulting films at high temperatures under air. The ZnGa2O4-beta-Ga2O3 thin films showed enhanced photocatalytic activity compared with ZnGa2O4. The photocatalytic enhancement of the ZnGa2O4-beta-Ga2O3 is explained by the formation of type-II band alignment at the interfaces between ZnGa2O4 and Ga2O3, resulting in enhanced photoinduced charge separation in the material.
引用
收藏
页码：910 / 916
页数：7
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