Aging improvement of Mn-Zn-Ni-Mg-Al-O high-entropy oxide films

被引：3

作者：

Ren, Wei ^{[1
,2
]}

Han, Yu-Xin ^{[1
]}

Wang, Wei-Li ^{[2
]}

Li, Sai-Rui ^{[1
]}

Liu, Xian-Hai ^{[1
]}

Weng, Xiang ^{[2
]}

机构：

[1] Xian Univ Posts & Telecommun, Sch Sci, Xian 710121, Peoples R China

[2] Northwestern Polytech Univ, Xian 710072, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2024年 / 35卷 / 01期

基金：

中国国家自然科学基金;

关键词：

ELECTRICAL-PROPERTIES; THIN-FILMS; CATIONIC DISTRIBUTION; TEMPERATURE;

D O I：

10.1007/s10854-023-11853-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mn(1.9-x) Zn0.2Ni0.6MgxAl0.3O4 (0 < x < 1) high-entropy oxide films were prepared on silicon substrate. The effects of Mg doping on microstructure, cation distribution, and electrical and aging properties of thin films were investigated. Mg2+ mainly replaces Mn2+ in the tetrahedron and does not affect the distribution of other trivalent cations in the octahedron. The thermal constant of the film varies from 2989.5 to 2176.6 K with the change of Mg/Mn ion content. Aging coefficient varies from 10.47 to 9.07%. The aging improvement of the films is ascribed to the multiple mechanisms of cationic sluggish diffusion as well as the variance in film grain size.

引用

页数：9

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