The magnetoresistance acquisition system of a perpendicular magnetic tunnel junction using LabVIEW software

被引:1
|
作者
Rahman, N. [1 ]
Sbiaa, R. [1 ]
机构
[1] Sultan Qaboos Univ, Coll Sci, Dept Phys, POB 36,PC 123, Muscat, Oman
关键词
Data acquisition circuits; Data acquisition concepts; ANISOTROPY;
D O I
10.1088/1748-0221/18/04/P04032
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
For accelerated productivity, and continual innovation in the field of spintronics, the electrical characterization of the magnetic tunnel junction (MTJs) is of paramount importance. This report deals with the testing of the MTJs. It focuses on the design of an experimental setup with data acquisition of the MTJs with perpendicular magnetic tunnel junctions where a high magnetic field aligned perpendicular to the film plane is required. Furthermore, devices with very small electrodes of only a few micrometers in lateral size can be tested. A computer through a LabVIEW program controls the data acquisition system.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Tunneling magnetoresistance of perpendicular magnetic tunnel junction using L10 FePt electrodes on MgO/CrRu/TiN under-layers
    Kim, Chang Soo
    Jung, Jin-Won
    Choi, Dooho
    Sahashi, Masashi
    Kryder, Mark H.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [22] Perpendicular magnetic tunnel junction with W seed and capping layers
    Almasi, H.
    Sun, C. L.
    Li, X.
    Newhouse-Illige, T.
    Bi, C.
    Price, K. C.
    Nahar, S.
    Grezes, C.
    Hu, Q.
    Amiri, P. Khalili
    Wang, K. L.
    Voyles, P. M.
    Wang, W. G.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (15)
  • [23] Enhancement in Wind Tunnel Data Acquisition System using NI-LabVIEW
    Singh, D. B.
    Shawani, A. Leela
    ADVANCED TRENDS IN MECHANICAL AND AEROSPACE ENGINEERING (ATMA-2019), 2021, 2316
  • [24] Perpendicular magnetic tunnel junction performance under mechanical strain
    Roschewsky, Niklas
    Schafer, Sebastian
    Hellman, Frances
    Nikitin, Vladimir
    APPLIED PHYSICS LETTERS, 2018, 112 (23)
  • [25] Tunnel magnetoresistance and spin transfer torque in magnetic tunnel junction with embedded nanoparticles
    Useinov, Niazbeck
    MOSCOW INTERNATIONAL SYMPOSIUM ON MAGNETISM (MISM 2017), 2018, 185
  • [26] Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy
    Suzuki, Kazuya Z. Z.
    Mizukami, Shigemi
    AIP ADVANCES, 2023, 13 (03)
  • [27] Temperature dependence of magnetoresistance in the magnetic tunnel junction with an asymmetrical barrier
    Wang, Jun-Zhong
    Li, Bo-Zang
    Hu, Zhan-Ning
    Physics Letters, Section A: General, Atomic and Solid State Physics, 1999, 261 (5-6): : 371 - 378
  • [28] Temperature dependence of magnetoresistance in the magnetic tunnel junction with an asymmetrical barrier
    Wang, JZ
    Li, BZ
    Hu, ZN
    PHYSICS LETTERS A, 1999, 261 (5-6) : 371 - 378
  • [29] High-temperature magnetoresistance study of a magnetic tunnel junction
    Chen, D. C.
    Yao, Y. D.
    Chen, C. M.
    Hung, James
    Chen, Y. S.
    Wang, W. H.
    Chen, W. C.
    Kao, M. J.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 304 (01) : E297 - E299
  • [30] Magnetoresistance Implications for Complementary Magnetic Tunnel Junction Logic (CMAT)
    Friedman, Joseph S.
    Querlioz, Damien
    Sahakian, Alan V.
    PROCEEDINGS OF THE 2015 IEEE/ACM INTERNATIONAL SYMPOSIUM ON NANOSCALE ARCHITECTURES (NANOARCH 15), 2015, : 143 - 144