The magnetoresistance acquisition system of a perpendicular magnetic tunnel junction using LabVIEW software

被引:1
|
作者
Rahman, N. [1 ]
Sbiaa, R. [1 ]
机构
[1] Sultan Qaboos Univ, Coll Sci, Dept Phys, POB 36,PC 123, Muscat, Oman
关键词
Data acquisition circuits; Data acquisition concepts; ANISOTROPY;
D O I
10.1088/1748-0221/18/04/P04032
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
For accelerated productivity, and continual innovation in the field of spintronics, the electrical characterization of the magnetic tunnel junction (MTJs) is of paramount importance. This report deals with the testing of the MTJs. It focuses on the design of an experimental setup with data acquisition of the MTJs with perpendicular magnetic tunnel junctions where a high magnetic field aligned perpendicular to the film plane is required. Furthermore, devices with very small electrodes of only a few micrometers in lateral size can be tested. A computer through a LabVIEW program controls the data acquisition system.
引用
收藏
页数:12
相关论文
共 50 条
  • [1] Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy
    Fang, B.
    Zhang, X.
    Zhang, S.
    Zeng, Z. M.
    Cai, J. W.
    AIP ADVANCES, 2015, 5 (06):
  • [2] Magnetoresistance of a nonstationary magnetic tunnel junction
    Abdulkadyrov D.V.
    Beletskii N.N.
    Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 2010, 69 (20): : 1837 - 1849
  • [3] Magnetoresistance oscillations in magnetic tunnel junction
    Kim, P. D.
    Zidanic, J.
    Volkov, N. V.
    Patrin, G. S.
    Song, Y. Y.
    Yu, S. C.
    Kim, C. G.
    Yun, J. H.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 316 (02) : 236 - 239
  • [4] Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer
    Ma, Qinli
    Mizukami, Shigemi
    Kubota, Takahide
    Zhang, Xianmin
    Sugihara, Atsushi
    Naganuma, Hiroshi
    Oogane, Mikihiko
    Ando, Yasuo
    Miyazaki, Terunobu
    1600, American Institute of Physics Inc. (114):
  • [5] Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer
    Ma, Qinli
    Mizukami, Shigemi
    Kubota, Takahide
    Zhang, Xianmin
    Sugihara, Atsushi
    Naganuma, Hiroshi
    Oogane, Mikihiko
    Ando, Yasuo
    Miyazaki, Terunobu
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)
  • [6] Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction
    Useinov, A. N.
    Useinov, N. K.
    Tagirov, L. R.
    Kosel, J.
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2012, 25 (08) : 2573 - 2576
  • [7] Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction
    A. N. Useinov
    N. K. Useinov
    L. R. Tagirov
    J. Kosel
    Journal of Superconductivity and Novel Magnetism, 2012, 25 : 2573 - 2576
  • [8] Enhancement of tunnel magnetoresistance in magnetic tunnel junction by a superlattice barrier
    Chen, C. H.
    Hsueh, W. J.
    APPLIED PHYSICS LETTERS, 2014, 104 (04)
  • [9] Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction
    Mukhopadhyay, S
    Das, I
    Pai, SP
    Raychaudhuri, P
    APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
  • [10] Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
    Ohmori, Hideto
    Hatori, Tomoya
    Nakagawa, Shigeki
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)