Direct Z-scheme MoSTe/g-GeC heterostructure for photocatalytic water splitting: A first-principles study

被引:14
|
作者
Ma, Deming [1 ]
Li, Huan [1 ]
Wang, Jiahao [1 ]
Hu, Jinchi [1 ]
Yang, Xiaoyu [1 ]
Fu, Yuhui [1 ]
Cui, Zhen [2 ]
Li, Enling [1 ]
机构
[1] Xian Univ Technol, Dept Appl Phys, Xian 710054, Peoples R China
[2] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Peoples R China
关键词
Z-scheme photocatalyst; Photocatalysis; First-principles calculations; Two-dimensional material; TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-STRUCTURE; PHOSPHORUS;
D O I
10.1016/j.ijhydene.2023.11.051
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper, based on the first-principle calculations of hybrid density functional theory, the MoSTe/g-GeC of the Z-scheme heterostructure is constructed. The stability, electronic properties, optical absorption properties, and photocatalytic mechanism of the heterostructure is investigated. The band structure of MoSTe/g-GeC heterostructure is staggered, and the bandgap is 0.47 eV. The built-in electric field from g-GeC to MoSTe, with a size of 1.03 eV. The optical absorption coefficient of MoSTe/g-GeC heterostructures is significantly higher than that of MoSTe and g-GeC layer. When pH ranges from 0 to 7, the reduction reaction occurs in g-GeC layer, and the oxidation reaction occurs in the MoSTe layer. In the MoSTe/g-GeC heterostructure under different stresses, the band structure is arranged in a staggered manner. Importantly, under tensile strain, the bandgap of MoSTe/g-GeC heterostructure can be changed from the indirect into a direct bandgap. The bandgap of heterostructure decreases under the strain. In addition, the analysis of the photocatalytic mechanism shows that the redox re-action of the MoSTe/g-GeC heterostructure occurs on the layer with strong redox ability, and their light absorption ability is significantly enhanced compared to single-layers, which effectively improves the photocatalytic properties. It's a potential high-efficiency photocatalytic materials for direct Z-scheme heterostructure.
引用
收藏
页码:1216 / 1224
页数:9
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