Sunlight loss for femtosecond microstructured silicon with two impurity bands

被引：0

作者：

方健 ^{[1
]}

陈长水 ^{[1
]}

王芳 ^{[1
]}

刘颂豪 ^{[1
]}

机构：

[1] Institute of Biophotonics,South China Normal University

来源：

ChinesePhysicsB | 2011年 / 20卷 / 07期

基金：

中国国家自然科学基金;

关键词：

black silicon; solar cell with impurity bands; loss of sunlight;

D O I：

暂无

中图分类号：

O474 [杂质和缺陷]; TM914.4 [太阳能电池];

学科分类号：

摘要：

Black silicon,produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas,is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells.Taking chalcogen as an example,we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te 0 (0.307 eV) and Te + (0.411 eV) are doped into microstructured silicon.Finally,problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis.

引用

页码：181 / 185

页数：5

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