Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model
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作者:
Kwok So-Ying
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机构:
Center of Super-Diamond and Advanced Films(COSDAF)and Department of Physics and Materials Science,City University of Hong KongCenter of Super-Diamond and Advanced Films(COSDAF)and Department of Physics and Materials Science,City University of Hong Kong
Kwok So-Ying
[1
]
YUEN Muk-Fung
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机构:
Center of Super-Diamond and Advanced Films(COSDAF)and Department of Physics and Materials Science,City University of Hong KongCenter of Super-Diamond and Advanced Films(COSDAF)and Department of Physics and Materials Science,City University of Hong Kong
YUEN Muk-Fung
[1
]
机构:
[1] Center of Super-Diamond and Advanced Films(COSDAF)and Department of Physics and Materials Science,City University of Hong Kong
By taking into account the two-spin interaction in the transverse Ising model(TIM),the influence of the defect layers(including J;andΩ;) on the polarization and Curie temperature are calculated numerically,within the framework of the decoupling approximation under Green’s function.The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of J;and the small value ofΩ;of the defect layers.Meanwhile,the dependence of the crossover values of the exchange interaction J a,the transverse GeldΩ;of the bulk material on the exchange interaction J;and the transverse fieldΩ;of the defect layers are shown in 3-Dimensional(3-D) figures for the first time.Moreover,the transition features of the ferroelectric thin film with defect layers are presented.
机构:
Civil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R ChinaCivil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China
Xiong, Yang
Xiao-Yu, Kuang
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机构:
Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R ChinaCivil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China