Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

被引:0
|
作者
Kwok So-Ying [1 ]
YUEN Muk-Fung [1 ]
机构
[1] Center of Super-Diamond and Advanced Films(COSDAF)and Department of Physics and Materials Science,City University of Hong Kong
关键词
ferroelectrics; phase transitions; defect-layer;
D O I
暂无
中图分类号
O484 [薄膜物理学];
学科分类号
080501 ; 1406 ;
摘要
By taking into account the two-spin interaction in the transverse Ising model(TIM),the influence of the defect layers(including J;andΩ;) on the polarization and Curie temperature are calculated numerically,within the framework of the decoupling approximation under Green’s function.The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of J;and the small value ofΩ;of the defect layers.Meanwhile,the dependence of the crossover values of the exchange interaction J a,the transverse GeldΩ;of the bulk material on the exchange interaction J;and the transverse fieldΩ;of the defect layers are shown in 3-Dimensional(3-D) figures for the first time.Moreover,the transition features of the ferroelectric thin film with defect layers are presented.
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页码:1057 / 1062
页数:6
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