Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis

被引：0
|
作者：
李斌桥 [1 ]
孙忠岩 [1 ]
徐江涛 [1 ]
机构：
[1] School of Electronics and Information Engineering,Tianjin University
来源：
Journal of Semiconductors | 2010年 / 31卷 / 05期
基金：
中国国家自然科学基金;
关键词：
CMOS image sensor; double exposure; dynamic range; five-transistor active pixel;
D O I：
暂无
中图分类号：
TP212 [发送器（变换器）、传感器];
学科分类号：
080202 ;
摘要：
A wide-dynamic-range CMOS image sensor(CIS) based on synthesis of a long-time and a short-time exposure signal in the floating diffusion(FD) of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18μm CIS process.With the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second(fps).The proposed CMOS image sensor meets the demands of applications in security surveillance systems.
引用
收藏
页码：73 / 77
页数：5
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