Polysilicon Prepared from SiCl4 by Atmospheric-Pressure Non-Thermal Plasma

被引：0
|
作者：
李小松 [1 ]
王楠 [1 ]
杨晋华 [1 ]
王友年 [1 ]
朱爱民 [1 ]
机构：
[1] School of Physics and Optoelectronic Engineering,Dalian University of Technology
来源：
Plasma Science and Technology | 2011年 / 05期
关键词：
non-thermal plasma; atmospheric pressure; polysilicon; optical emission spectrum;
D O I：
暂无
中图分类号：
O53 [等离子体物理学];
学科分类号：
070204 ;
摘要：
Non-thermal plasma at atmospheric pressure was explored for the preparation ofpolysilicon from SiCl.The power supply sources of positive pulse and alternating current (8 kHzand 100 kHz) were compared for polysilicon preparation.The samples prepared by using the100 kHz power source were crystalline silicon.The effects of Hand SiClvolume fractions wereinvestigated.The optical emission spectra showed that silicon species played an important role inpolysilicon deposition
引用
收藏
页码：567 / 570
页数：4
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