One-Dimensional Fluid Model of Pulse Modulated Radio-Frequency SiH4 /N2 /O2 Discharge
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王燕
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School of Physics and Optoelectronic Technology,Dalian University of TechnologySchool of Physics and Optoelectronic Technology,Dalian University of Technology
王燕
[1
]
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刘相梅
[1
,2
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宋远红
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School of Physics and Optoelectronic Technology,Dalian University of TechnologySchool of Physics and Optoelectronic Technology,Dalian University of Technology
宋远红
[1
]
王友年
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School of Physics and Optoelectronic Technology,Dalian University of TechnologySchool of Physics and Optoelectronic Technology,Dalian University of Technology
王友年
[1
]
机构:
[1] School of Physics and Optoelectronic Technology,Dalian University of Technology
[2] School of Physics,Huazhong University of Science and Technology
Driven by pulse modulated radio-frequency source,the behavior of SiH 4 /N 2 /O 2 plasma in capacitively coupled discharge are studied by using a one-dimensional fluid model.Totally,48 different species(electrons,ions,neutrals,radicals and excited species) are involved in this simulation.Time evolution of the particle densities and electron temperature with different duty cycles are obtained,as well as the electronegativity n SiH3 /n e of the main negative ion(SiH3).The results show that,by reducing the duty cycle,higher electron temperature and particle density can be achieved for the same average dissipated power,and the ion energy can also be effectively reduced,which will offer evident improvement in plasma deposition processes compared with the case of continuous wave discharge.
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School of Physics and Optoelectronic Technology,Dalian University of TechnologySchool of Physics and Optoelectronic Technology,Dalian University of Technology
王燕
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刘相梅
宋远红
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机构:
School of Physics and Optoelectronic Technology,Dalian University of TechnologySchool of Physics and Optoelectronic Technology,Dalian University of Technology
宋远红
王友年
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机构:
School of Physics and Optoelectronic Technology,Dalian University of TechnologySchool of Physics and Optoelectronic Technology,Dalian University of Technology
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Sungkyunkwan Univ, CAPST, NU SKKU Joint Inst Plasma Nano Mat IPNM, Dept Adv Mat Sci & Engn, Suwon 440746, South KoreaSungkyunkwan Univ, CAPST, NU SKKU Joint Inst Plasma Nano Mat IPNM, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea
Sahu, Bibhuti Bhusan
Han, Jeon Geon
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Sungkyunkwan Univ, CAPST, NU SKKU Joint Inst Plasma Nano Mat IPNM, Dept Adv Mat Sci & Engn, Suwon 440746, South KoreaSungkyunkwan Univ, CAPST, NU SKKU Joint Inst Plasma Nano Mat IPNM, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea
Han, Jeon Geon
Shin, Kyung Sik
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Sungkyunkwan Univ, CAPST, NU SKKU Joint Inst Plasma Nano Mat IPNM, Dept Adv Mat Sci & Engn, Suwon 440746, South KoreaSungkyunkwan Univ, CAPST, NU SKKU Joint Inst Plasma Nano Mat IPNM, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea
Shin, Kyung Sik
Hori, Masaru
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Nagoya Univ, Plasma Nanotechnol Res Ctr, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, JapanSungkyunkwan Univ, CAPST, NU SKKU Joint Inst Plasma Nano Mat IPNM, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea