An analytical model of the electric field distributions of buried superjunction devices

被引：0
|
作者：
黄海猛 [1 ]
陈星弼 [1 ]
机构：
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China
来源：
Journal of Semiconductors | 2013年 / 34卷 / 06期
关键词：
analytical model; superjunction devices; electric field distributions; breakdown voltage;
D O I：
暂无
中图分类号：
O441.4 [电磁波与电磁场];
学科分类号：
0809 ;
摘要：
An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green’s function approach,is derived.An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation.The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations.
引用
收藏
页码：68 / 71
页数：4
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