Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

被引：0
|
作者：
XIAO Zhi-Song
XU Fei
CHENG Guo-An
ZHANG Tong-He
YI Zhong-Zhen WANG Shui-Feng (Key Laboratory in University for Radiation Beam Technology and Materials Modification
Beijing Radiation
机构：
来源：
NuclearScienceandTechniques | 2001年 / 01期
关键词：
Photoluminescence; Neodymium silicide; Ion implantation; MEVVA ion source; Rapid thermal annealing (RTA);
D O I：
暂无
中图分类号：
TN383 [发光器件];
学科分类号：
0803 ;
摘要：
Neodymium silicides were synthesized by Nd ion implant6d into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2 was formed in a neodymium-implanted silicon thin film during the as-implanted state, but there was only single neodymium silicide compound in the postannealed state, and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violet luminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence (PL) increased with increasing the neodymium ion fluence. Moreover, the photoluminescence was closely dependent on the temperature of rapid thermal annealing (RTA). A mechanism of photoluminescence was discussed.
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页码：21 / 25
页数：5
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