New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair

被引：0

作者：

周静 ^{[1
]}

万里兮 ^{[1
]}

李君 ^{[1
]}

王惠娟 ^{[1
]}

戴风伟 ^{[1
]}

Daniel Guidotti ^{[1
]}

曹立强 ^{[1
]}

于大全 ^{[1
]}

机构：

[1] Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

来源：

JournalofSemiconductors | 2013年 / 34卷 / 04期

关键词：

through-silicon vias; de-embedding structure; microwave network; multiple solutions; transmission matrix; equivalent circuit;

D O I：

暂无

中图分类号：

TN406 [可靠性及例行试验];

学科分类号：

080903 ; 1401 ;

摘要：

Two innovative de-embedding methods are proposed for extracting an electrical model for a throughsilicon -via(TSV) pair consisting of a ground-signal(GS) structure.In addition,based on microwave network theory, a new solution scheme is developed for dealing with multiple solutions of the transfer matrix during the process of de-embedding.A unique solution is determined based on the amplitude and the phase characteristic of S parameters. In the first de-embedding method,a typical "π" type model of the TSV pair is developed,which illustrates the need to allow for frequency dependence in the equivalent TSV pair Spice model.This de-embedding method is shown to be effective for extracting the electrical properties of the TSVs.The feasibility of a second de-embedding method is also investigated.

引用

页码：80 / 86

页数：7

共 36 条

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