Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

被引:0
|
作者
Xinyu Huang [1 ]
Xu Han [1 ,2 ,3 ]
Yunyun Dai [1 ]
Xiaolong Xu [4 ]
Jiahao Yan [4 ]
Mengting Huang [4 ]
Pengfei Ding [1 ]
Decheng Zhang [1 ]
Hui Chen [1 ]
Vijay Laxmi [4 ]
Xu Wu [1 ]
Liwei Liu [4 ]
Yeliang Wang [4 ,5 ]
Yang Xu [2 ,3 ]
Yuan Huang [1 ,5 ]
机构
[1] Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology
[2] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
[3] School of Physical Sciences, University of Chinese Academy of Sciences
[4] School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology
[5] BIT Chongqing Institute of Microelectronics and Microsystems
基金
中国国家自然科学基金;
关键词
flat-band physics; two-dimensional materials; moiré; superlattices; Hubbard model; excitons;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.
引用
收藏
页码:47 / 59
页数:13
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