DOPED SnO2 FILMS GROWN BY THE METALLORGANIC CHEMICAL VAPOUR DEPOSITION TECHNIQUE

被引：0
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作者：
罗文秀
任鹏程
谭忠恪
机构：
来源：
Chinese Journal of Chemical Engineering | 1993年 / 04期
基金：
中国国家自然科学基金;
关键词：
Metallorganic chemical vapor deposition; tin oxide; doped stannic oxide film; thin film growth; photoelectrochemical properties;
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摘要：
1 INTRODUCTIONStannic oxide as a wide-band gap semiconductor(Eg≈3.5eV),has high transparency in thevisible spectral region(index of refraction,n≈1.9)and resistance to acids and bases at roomtemperature.The SnOthin film.the most useful form in application,has been prepared by avariety of physical and chemical deposition processes.It has been found that undoped SnOfilms have high resistivity(about 10Ω·cm)at room temperature[1].For manyapplications requiring not too low sheet resistance,nonstoichiometric(oxygen-deficient)tin
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页码：62 / 65
页数：4
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