Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer

被引：0

作者：

刘向 ^{[1
]}

刘惠 ^{[2
]}

机构：

[1] School of Materials Science and Engineering,Dalian Jiaotong University

[2] School of Electronic and Information Engineering,Dalian University of Technology

来源：

Journal of Semiconductors | 2011年 / 32卷 / 03期

基金：

中国国家自然科学基金;

关键词：

organic thin film transistor; composite insulation layer; carrier mobility;

D O I：

暂无

中图分类号：

TN321.5 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

We have investigated a SiO2/SiNx/SiO2composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO2gate insulator. The SiO2/SiNx/SiO2composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2insulation layer device,the SiO2/SiNx/SiO2composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.

引用

页码：54 / 56

页数：3

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