共 50 条
- [31] MBE and MOCVD growth of AlGaAs-AlAs-GaAs double barrier multiple quantum well infrared detector Materials science & engineering. B, Solid-state materials for advanced technology, 1995, B35 (1-3): : 176 - 179
- [33] Nuclear radiation effects on GaAs/AlGaAs quantum well infrared photodetectors INFRARED DETECTORS AND FOCAL PLANE ARRAYS IV, 1996, 2746 : 134 - 141
- [34] Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors INFRARED DETECTORS AND FOCAL PLANE ARRAYS V, 1998, 3379 : 410 - 422
- [35] Quantum mechanical model and simulation of GaAs/AlGaAs quantum well infrared photo-detector - I. Optical aspects Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 2002, 21 (05): : 321 - 326
- [36] Investigation of intersubband transition in GaAs/AlGaAs quantum well infrared photodetectors SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, 2008, 31 : 105 - +
- [37] GaAs/AlGaAs quantum well infrared detectors with an integral silicon grating Chi, Gou-Chung, 1600, JJAP, Minato-ku, Japan (33):
- [38] Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors Applied Physics A, 2007, 89 : 701 - 705
- [39] Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 89 (03): : 701 - 705