A new low-voltage and high-speed sense amplifier for flash memory

被引：0
|
作者：
郭家荣 [1 ]
冉峰 [1 ]
机构：
[1] Microelectronic R&D Center,Shanghai University
来源：
Journal of Semiconductors | 2011年 / 12期
关键词：
flash memory; sense amplifier; current-mode; low-voltage;
D O I：
暂无
中图分类号：
TN722 [放大器];
学科分类号：
080902 ;
摘要：
A new low-voltage and high-speed sense amplifier is presented,based on a very simple direct current-mode comparison.It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage,low power and high precision.The proposed amplifier can sense a 0.5μA current gap and work with a lowest voltage of 1V.In addition,the current power of a single amplifier is optimized by 15%.
引用
收藏
页码：107 / 111
页数：5
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