Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs

被引：0

作者：

Lan Bi ^{[1
,2
]}

Yixu Yao ^{[1
,2
]}

Qimeng Jiang ^{[1
,2
]}

Sen Huang ^{[1
,2
]}

Xinhua Wang ^{[1
,2
]}

Hao Jin ^{[1
,2
]}

Xinyue Dai ^{[1
,2
]}

Zhengyuan Xu ^{[1
]}

Jie Fan ^{[1
,2
]}

Haibo Yin ^{[1
,2
]}

Ke Wei ^{[1
,2
]}

Xinyu Liu ^{[1
,2
]}

机构：

[1] High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences

[2] Institute of Microelectronics, University of Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2022年 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.

引用

页码：78 / 81

页数：4

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