Photon-activated charge domain in high-gain photoconductive switches

被引：15
|
作者：
施卫
戴慧莹
孙小卫
机构：
[1] Xi’an University of Technology
[2] Nanyang Technological University
[3] Xi’an 710048
[4] Nanyang Avenue
[5] Singapore 639798
来源：
Chinese Optics Letters | 2003年 / 09期
关键词：
PCSS; on; or; GaAs; Photon-activated charge domain in high-gain photoconductive switches; in; than; high; that; been; of;
D O I：
暂无
中图分类号：
TN256 [集成光学器件];
学科分类号：
0702 ; 070207 ;
摘要：
We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.
引用
收藏
页码：553 / 555
页数：3
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