Photon-activated charge domain in high-gain photoconductive switches

被引：15

作者：

施卫

戴慧莹

孙小卫

机构：

[1] Xi’an University of Technology

[2] Nanyang Technological University

[3] Xi’an 710048

[4] Nanyang Avenue

[5] Singapore 639798

来源：

Chinese Optics Letters | 2003年 / 09期

关键词：

PCSS; on; or; GaAs; Photon-activated charge domain in high-gain photoconductive switches; in; than; high; that; been; of;

D O I：

暂无

中图分类号：

TN256 [集成光学器件];

学科分类号：

0702 ; 070207 ;

摘要：

We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.

引用

页码：553 / 555

页数：3

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