Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

被引：0

作者：

王信 ^{[1
,2
,3
]}

陆妩 ^{[1
,2
]}

郭旗 ^{[1
,2
]}

吴雪 ^{[1
,2
,3
]}

席善斌 ^{[1
,2
,3
]}

邓伟 ^{[1
,2
,3
]}

崔江维 ^{[1
,2
]}

张晋新 ^{[1
,2
,3
]}

机构：

[1] Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences

[2] Xinjiang Key Laboratory of Electronic Information Materials and Devices

[3] University of Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2013年 / 12期

关键词：

digital-to-analog; CBCMOS; dose rate effect; ionizing radiation;

D O I：

暂无

中图分类号：

TN792 [];

学科分类号：

080902 ;

摘要：

A digital-to-analog converter(DAC) in CBCMOS technology was irradiated by 60Co-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC.The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates.Under different bias conditions,the radiation failure levels were different,and the radiation damage under operation bias conditions was more severe.Finally,test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.

引用

页码：57 / 63

页数：7

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