ON THE TEMPERATURE DEPENDENCE OF LOW-TEMPERATURE RESISTIVITY IN A15 COMPOUNDS

被引：0
|
作者：
雷啸霖
机构：
[1] Academia Sinica
[2] Shonghai Institute of Metallurgy
来源：
A Monthly Journal of Science | 1982年 / 06期
关键词：
ON THE TEMPERATURE DEPENDENCE OF LOW-TEMPERATURE RESISTIVITY IN A15 COMPOUNDS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ⅰ. INTRODUCTIONIt has been shown experimentally that the electrical resistivity of A15 compounds like NbSn, NbAl and NbGe can well be described by the formula ρ=ρ+αT~2 over the temperature range from their Tto some 50K, and that the resistivity of VSi exhibits only a little more rapid increase with temperature. On the other hand, the
引用
收藏
页码：622 / 626
页数：5
相关论文
共 50 条
12345