Growth of Free-Standing Diamond Films on Stainless Steel

被引:0
|
作者
满卫东
汪建华
张宝华
白宇明
机构
[1] China
[2] China Department of Materials Science and Engineering
[3] Department of Materials Science and Engineering Wuhan Institute of Chemical Technology
[4] Department of Orthodontics School of Stomatology
[5] Hefei 230031
[6] Institute of Plasma Physics Chinese Academy of Sciences
[7] Wuhan 430073
[8] Wuhan Institute of Chemical Technology
[9] Xi’an 710023
[10] the Fourth Military Medical University
关键词
microwave plasma; chemical vapor deposition; free-standing diamond film; stainless steel;
D O I
暂无
中图分类号
O484.1 [薄膜的生长、结构和外延];
学科分类号
080501 ; 1406 ;
摘要
Free-standing diamond films have been successfully deposited on stainless steel substrates using microwave plasma-assisted chemical vapor deposition. Although iron, which is the main element of stainless steel, is known to inhibit the nucleation of diamond and enhance the formation of graphite, we were able to grow relatively thick films (-1.2 mm). The films were easily detachable from the substrates. The poor adhesion made it possible to obtain free-standing diamond films without chemical etching. Raman spectroscopy showed the 1332 cm-1 characteristic Raman peak of diamond and the 1580 cm-1, 1350 cm-1 bands of graphite on the growth surface and backside of the films, respectively. By energy dispersive X-ray spectroscopy it was only possible to detect iron on the back of the films, but not on the surface. The role of iron in the film growth is discussed.
引用
收藏
页码:2950 / 2952
页数:3
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