AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy

被引：1
|
作者：
杨国文
徐遵图
徐俊英
张敬明
肖建伟
陈良蕙
机构：
来源：
Journal of Semiconductors | 1997年 / 04期
关键词：
Ga; In; cm; AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy;
D O I：
暂无
中图分类号：
TN24 [激光技术、微波激射技术];
学科分类号：
0803 ; 080401 ; 080901 ;
摘要：
AlInGaAs/AlGaAs strained single quantum well lasers with an emission wavelength of 810nm were fabricated by molecular beam epitaxy (MBE). The threshold current density is 375A/cm2 for broad-area lasers(100×800μm2), and it decreases to 270A/cm2 when the cavity length extends to 1600μm, which is the best result in quaternary AlInGaAs/AlGaAs strained quantum well lasers for the as-grown wafer by MBE. An external differential quantum efficiency of 1.1W/A(72%) and a narrow transverse beam divergence of 34° are obtained for the uncoated lasers.
引用
收藏
页码：313 / 316
页数：4
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