Study on Valence Band Offsets atStrained Heterojunctions

被引：0
|
作者：
ZHENG Yong-mei (Dept. of Phys.
机构：
来源：
Semiconductor Photonics and Technology | 1999年 / 04期
关键词：
Strained Heterojunction; Valence Band Offset; Average Bond Energy Method; Deformation Potential;
D O I：
暂无
中图分类号：
O471.5 [半导体能带结构];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
A method, which can predict the valence band offsets at strained layer heterojunctions under different strain situations only by calculating band structures and deformation parameters of the bulk materials, is suggested. The applicability of this method is verified by calculation of the valence band offsets at strained layer heterojuntions ,such as InP/InAs, InP/GaP, GaAs/InAs, GaP/GaAs and AlAs/InAs with various strain conditions.
引用
收藏
页码：198 / 202 +220
页数：6
相关论文
共 50 条
  • [41] Isotype heterojunctions with flat valence or conduction band
    Babic, DI
    Dohler, GH
    Bowers, JE
    Hu, EL
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (12) : 2195 - 2198
  • [42] BAND-GAPS, EFFECTIVE MASSES, AND BAND OFFSETS IN LATTICE MATCHED HETEROJUNCTIONS
    HRIVNAK, L
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1991, 128 (02): : K89 - K93
  • [43] Effects of substrate orientation on the valence band splittings and valence band offsets in GaN and AlN films
    Majewski, JA
    Stadele, M
    NITRIDE SEMICONDUCTORS, 1998, 482 : 917 - 922
  • [44] Band offsets of AlxGa1-xSbAs/InGaAs heterojunctions
    Cai, WZ
    Miller, DL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (02): : 512 - 522
  • [45] SEMICONDUCTOR HETEROJUNCTIONS AND SUPERLATTICES - BAND OFFSETS AND ELECTRONIC-STRUCTURES
    CHRISTENSEN, NE
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (03): : 567 - 581
  • [46] Band offsets in heterojunctions formed by oxides with cubic perovskite structure
    A. I. Lebedev
    Physics of the Solid State, 2014, 56 : 1039 - 1047
  • [47] INTERFACIAL ATOMIC-STRUCTURE AND BAND OFFSETS AT SEMICONDUCTOR HETEROJUNCTIONS
    DANDREA, RG
    DUKE, CB
    ZUNGER, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1744 - 1753
  • [48] CALCULATION OF BAND OFFSETS IN STRAINED II-VI HETEROJUNCTIONS
    BERTHO, D
    SIMON, A
    BOIRON, D
    JOUANIN, C
    PRIESTER, C
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 372 - 375
  • [49] Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
    Afanas'ev, V. V.
    Chou, H. -Y.
    Houssa, M.
    Stesmans, A.
    Lamagna, L.
    Lamperti, A.
    Molle, A.
    Vincent, B.
    Brammertz, G.
    APPLIED PHYSICS LETTERS, 2011, 99 (17)
  • [50] The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
    Danielsson, E
    Zetterling, CM
    Östling, M
    Linthicum, K
    Thomson, DB
    Nam, OH
    Davis, RF
    SOLID-STATE ELECTRONICS, 2002, 46 (06) : 827 - 835
12345