Study on Valence Band Offsets atStrained Heterojunctions

被引：0
|
作者：
ZHENG Yong-mei (Dept. of Phys.
机构：
来源：
Semiconductor Photonics and Technology | 1999年 / 04期
关键词：
Strained Heterojunction; Valence Band Offset; Average Bond Energy Method; Deformation Potential;
D O I：
暂无
中图分类号：
O471.5 [半导体能带结构];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
A method, which can predict the valence band offsets at strained layer heterojunctions under different strain situations only by calculating band structures and deformation parameters of the bulk materials, is suggested. The applicability of this method is verified by calculation of the valence band offsets at strained layer heterojuntions ,such as InP/InAs, InP/GaP, GaAs/InAs, GaP/GaAs and AlAs/InAs with various strain conditions.
引用
收藏
页码：198 / 202 +220
页数：6
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