N1s Electron Binding Energies of CNx Thin Films Grown by Magnetron Sputtering at Different Temperature

被引:0
|
作者
Weitao ZHENG
Kezhao XING
N.Hellgren
I.Ivanov
WS.Salaneck and J.-E.Sundgren (Dept. of Physics
机构
关键词
Thin; N1s Electron Binding Energies of CN_x Thin Films Grown by Magnetron Sputtering at Different Temperature; CN;
D O I
暂无
中图分类号
O613 [非金属元素及其化合物];
学科分类号
070301 ; 081704 ;
摘要
Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT1R) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature Ts, in which the peak at 400.0 eV increases with Ts, whereas the peak at 398.3 eV decreases with Ts slightly On the basis of XPS, FT1R and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp2 coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp3 coordinated C atoms as well as N C bonds.
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页码:25 / 28
页数:4
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