Polyoxometalate derived p-n heterojunction for optimized reaction interface and improved HER

被引:0
|
作者
Xiaoli Cui [1 ]
Yunmeng Sun [1 ]
Xinxin Xu [1 ,2 ]
机构
[1] Department of Chemistry, College of Science, Northeastern University
[2] Institute for Frontier Technologies of Low-Carbon Steelmaking, Northeastern University
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TQ116.2 [氢气]; TQ426 [催化剂(触媒)];
学科分类号
080502 ; 0817 ; 081705 ;
摘要
MoS2is a typical electrocatalyst for hydrogen evolution reaction(HER),but the HER activity is spoilt by intensive adsorption towards H*,which requires further improvement.For n-type MoS2,the construction of p-n heterojunction with p-type MoO3can reverse this situation,because inner electronic field in p-n heterojunction can facilitate H*desorption.Based on this hypothesis,p-n heterojunction is built between MoS2and MoO3with polyoxometalate compound as precursor.The obtained MoO3/MoS2exhibits excellent HER activity,which only requires 68 mV to obtain 10 mA/cm2.With MoO3/MoS2as cathode material and Zn slice as anode,Zn-H+battery is assembled.Its open circuit voltage achieves 1.11 V with short circuit current 151.4 mA/cm2.The peak power density of this Zn-H+battery reaches 47.6 mW/cm2.When discharge at 10 mA/cm2,the specific capacity and energy density reach 728 mAh/g and 759 Wh/kg.In this process,H2production rate of Zn-H+battery achieves 364μmol/h with Faradic efficiency 97.8%.It realizes H2production and electricity generation simultaneously.
引用
收藏
页码:523 / 526
页数:4
相关论文
共 50 条
  • [21] Resistive switching in a GaOx-NiOx p-n heterojunction
    Zheng, K.
    Zhao, J. L.
    Sun, X. W.
    Vinh, V. Q.
    Leck, K. S.
    Zhao, R.
    Yeo, Y. G.
    Law, L. T.
    Teo, K. L.
    APPLIED PHYSICS LETTERS, 2012, 101 (14)
  • [22] Bipolar Photoresponse in p-n Heterojunction for Spectrally Distinctive Photodetection
    Chen, Wei
    Wang, Danhao
    Luo, Dongyang
    Kang, Yang
    Fang, Shi
    Sun, Haiding
    2023 IEEE PHOTONICS CONFERENCE, IPC, 2023,
  • [23] Effects of a p-n junction on heterojunction far infrared detectors
    Matsik, S. G.
    Rinzan, M. B. M.
    Perera, A. G. U.
    Tan, H. H.
    Jagadish, C.
    Liu, H. C.
    INFRARED PHYSICS & TECHNOLOGY, 2007, 50 (2-3) : 274 - 278
  • [24] Self-sorting organogels with p-n heterojunction points
    Sugiyasu, Kazunori
    Kawano, Shin-ichiro
    Fujita, Norifumi
    Shinkai, Seiji
    CHEMISTRY OF MATERIALS, 2008, 20 (09) : 2863 - 2865
  • [25] ZnO nanorod arrays as p-n heterojunction ultraviolet photodetectors
    Lu, Y.
    Dajani, I. A.
    Knize, R. J.
    ELECTRONICS LETTERS, 2006, 42 (22) : 1309 - 1311
  • [26] In-sensor convolution processing with a bipolar p-n heterojunction
    Liu, Mingqiang
    Wang, Gui-Gen
    Liu, Zheng
    SCIENCE BULLETIN, 2022, 67 (15) : 1519 - 1521
  • [27] Electrosynthesis of organic-inorganic compounds (p-n heterojunction)
    Habelhames, F.
    Nessark, B.
    Girtan, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2010, 13 (03) : 141 - 146
  • [28] Negative Differential Resistance Transistor with Organic p-n Heterojunction
    Kobashi, Kazuyoshi
    Hayakawa, Ryoma
    Chikyow, Toyohiro
    Wakayama, Yutaka
    ADVANCED ELECTRONIC MATERIALS, 2017, 3 (08):
  • [29] The preparation and Optoelectronic Characteristics of the p-n Si/SiC heterojunction
    Zang, Yuan
    Chen, Zhiming
    Li, Lianbi
    Zhao, Shunfeng
    2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, : 306 - 308
  • [30] THE AC ADMITTANCE OF THE P-N PBS-SI HETEROJUNCTION
    STECKL, AJ
    SHEU, SP
    SOLID-STATE ELECTRONICS, 1980, 23 (07) : 715 - 720