Molecular-beam epitaxy of topological insulator Bi2Se3(111) and (221) thin films

被引：0
|
作者：
谢茂海 [1 ]
郭欣 [1 ]
徐忠杰 [1 ]
何永健 [1 ]
机构：
[1] Physics Department,The University of Hong Kong
来源：
Chinese Physics B | 2013年 / 22卷 / 06期
关键词：
topological insulator; molecular-beam epitaxy; Bi2Se3; twin domain; strain;
D O I：
暂无
中图分类号：
TM21 [绝缘材料、电介质及其制品];
学科分类号：
摘要：
This paper presents an overview of the growth of Bi2Se3,a prototypical three-dimensional topological insulator,by molecular-beam epitaxy on various substrates.Comparison is made between the growth of Bi2Se3(111) on van der Waals(vdW) and non-vdW substrates,with attention paid to twin suppression and strain.Growth along the [221] direction of Bi2Se3 on InP(001) and GaAs(001) substrates is also discussed.
引用
收藏
页码：95 / 102
页数：8
相关论文
共 50 条
  • [21] Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3
    1600, American Institute of Physics Inc. (113):
  • [22] Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
    Brito, Daniel
    Perez-Rodriguez, Ana
    Khatri, Ishwor
    Tavares, Carlos Jose
    Amado, Mario
    Castro, Eduardo
    Diez, Enrique
    Sadewasser, Sascha
    Claro, Marcel S.
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (11)
  • [23] Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3
    Glinka, Yuri D.
    Babakiray, Sercan
    Johnson, Trent A.
    Bristow, Alan D.
    Holcomb, Mikel B.
    Lederman, David
    APPLIED PHYSICS LETTERS, 2013, 103 (15)
  • [24] Size Effect in the Electrical Conductivity of Thin Films of Topological Insulator Bi2Se3
    Chistyakov V.V.
    Domozhirova A.N.
    Huang J.C.A.
    Marchenkov V.V.
    Bulletin of the Russian Academy of Sciences: Physics, 2019, 83 (07) : 838 - 840
  • [25] Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3
    Aguilar, R. Valdes
    Wu, L.
    Stier, A. V.
    Bilbro, L. S.
    Brahlek, M.
    Bansal, N.
    Oh, S.
    Armitage, N. P.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (15)
  • [26] Molecular beam epitaxy and characterization of thin Bi2Se3 films on Al2O3 (110)
    Tabor, Phillip
    Keenan, Cameron
    Urazdhin, Sergei
    Lederman, David
    APPLIED PHYSICS LETTERS, 2011, 99 (01)
  • [27] Molecular-Beam Epitaxy of 3D Topological Insulator Thin Films and Devices on Si Substrates
    Mussler, Gregor
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (01):
  • [28] Spiral Growth without Dislocations: Molecular Beam Epitaxy of the Topological Insulator Bi2Se3 on Epitaxial Graphene/SiC(0001)
    Liu, Y.
    Weinert, M.
    Li, L.
    PHYSICAL REVIEW LETTERS, 2012, 108 (11)
  • [29] Thickness-Independent Transport Channels in Topological Insulator Bi2Se3 Thin Films
    Bansal, Namrata
    Kim, Yong Seung
    Brahlek, Matthew
    Edrey, Eliav
    Oh, Seongshik
    PHYSICAL REVIEW LETTERS, 2012, 109 (11)
  • [30] Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films
    Wang, Wen Jie
    Gao, Kuang Hong
    Li, Qiu Lin
    Li, Zhi-Qing
    APPLIED PHYSICS LETTERS, 2017, 111 (23)
12345