Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method

被引：0
|
作者：
辛火平
林成鲁
许华平
邹世昌
石晓红
吴兴龙
朱宏
P.L.FHemment
机构：
[1] National Laboratory of Functional Materials for Informatics
[2] Shanghai 200083
[3] Shanghai Institute of Metallurgy. Chinese Academy of Sciences
[4] Ion Beam Laboratory
[5] National Laboratory of Solid State Microstructure
[6] National Laboratory for Infrared Physics
[7] Nanjing University
[8] Surrey GU2 5XH. UK
[9] Shanghai Institute of Technical Physics
[10] China
[11] Shanghai 200050
[12] Department of Electronic and Electrical Engineering
[13] Nanjing 210093
[14] University of Surrey. Guildford
[15] Shanghai Institute of Metallurgy
[16] Chinese Academy of Sciences
来源：
Science in China(Series E:Technological Sciences) | 1996年 / 04期
关键词：
ion implantation; C≡N covalent bond; buried carbon nitride CNx;
D O I：
暂无
中图分类号：
TB39 [其他材料];
学科分类号：
0805 ; 080502 ;
摘要：
Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated by X-ray photoelectron spectroscopy (XPS),Fourier transformation-infrared absorption spectroscopy (FTIR),Raman spectroscopy,cross-sectional transmission electron microscopy (XTEM),Rutherford backscattering spectroscopy (RBS).X-ray diffraction analysis (XRD) and Vickers microhardness measurement.The results show that the buried carbon nitride CN> layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film.Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C3N4 layer as N+ ions are implanted into carbon.A good agreement between experimental measurements and IRIS simulation is found.
引用
收藏
页码：404 / 411
页数：8
相关论文
共 50 条
  • [41] Interfacial structure control of cubic boron nitride films prepared by ion-beam assisted deposition
    Setsuhara, Y
    Suzuki, T
    Tanaka, Y
    Miyake, S
    Suzuki, M
    Kumagai, M
    Ogata, K
    Kohata, M
    Higeta, K
    Einishi, T
    Suzuki, Y
    Shimoitani, Y
    Motonami, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 851 - 856
  • [42] SEMI-HARD MAGNETISM OF IRON NITRIDE FILMS PREPARED BY DOUBLE ION-BEAM SPUTTERING
    NAGAKUBO, M
    YAMAMOTO, T
    NAOE, M
    IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (05) : 3893 - 3895
  • [43] DEVELOPMENT OF A DUAL ION-BEAM SYSTEM WITH SINGLE ACCELERATOR FOR MATERIALS STUDIES
    SUZUKI, K
    NISHIMURA, E
    HASHIMOTO, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 249 (2-3): : 491 - 495
  • [44] Photoconductivity and photoluminescence of amorphous carbon nitride a-CNx films prepared by the layer-by-layer method
    Katsuno, T
    Nitta, S
    Habuchi, H
    Iwasaki, T
    Itoh, T
    Nonomura, S
    AMORPHOUS AND NANOSTRUCTURED CARBON, 2000, 593 : 499 - 504
  • [45] ION-BEAM ANALYSIS OF THE CONCENTRATION AND THERMAL RELEASE OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    KUROI, T
    UMEZAWA, K
    YAMANE, J
    SHOJI, F
    OURA, K
    HANAWA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (08): : 1406 - 1410
  • [46] Ion-beam synthesis and growth mechanism of diamond-like materials
    Ronning, C
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 77 (01): : 39 - 50
  • [47] CARBON NITRIDE FILMS SYNTHESIZED BY COMBINED ION-BEAM AND LASER-ABLATION PROCESSING
    REN, ZM
    DU, YC
    QIU, YX
    NU, JD
    YING, ZF
    XIONG, XX
    LI, FM
    PHYSICAL REVIEW B, 1995, 51 (08): : 5274 - 5277
  • [48] Growth and tribological properties of amorphous hydrogenated carbon nitride produced by ion-beam technique
    Wu, RLC
    Miyoshi, K
    Lanter, WC
    Wrbanek, JD
    DeJoseph, CA
    SURFACE & COATINGS TECHNOLOGY, 1999, 120 : 573 - 578
  • [49] Ion-beam synthesis and growth mechanism of diamond-like materials
    C. Ronning
    Applied Physics A, 2003, 77 : 39 - 50
  • [50] Characterization of carbon nitride thin films prepared by dual ion beam sputtering
    Fernandez, A
    Prieto, P
    Quiros, C
    Sanz, JM
    Martin, JM
    Vacher, B
    APPLIED PHYSICS LETTERS, 1996, 69 (06) : 764 - 766
12345