Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method

被引：0

作者：

辛火平

林成鲁

许华平

邹世昌

石晓红

吴兴龙

朱宏

P.L.FHemment

机构：

[1] National Laboratory of Functional Materials for Informatics

[2] Shanghai 200083

[3] Shanghai Institute of Metallurgy. Chinese Academy of Sciences

[4] Ion Beam Laboratory

[5] National Laboratory of Solid State Microstructure

[6] National Laboratory for Infrared Physics

[7] Nanjing University

[8] Surrey GU2 5XH. UK

[9] Shanghai Institute of Technical Physics

[10] China

[11] Shanghai 200050

[12] Department of Electronic and Electrical Engineering

[13] Nanjing 210093

[14] University of Surrey. Guildford

[15] Shanghai Institute of Metallurgy

[16] Chinese Academy of Sciences

来源：

Science in China(Series E:Technological Sciences) | 1996年 / 04期

关键词：

ion implantation; C≡N covalent bond; buried carbon nitride CNx;

D O I：

暂无

中图分类号：

TB39 [其他材料];

学科分类号：

0805 ; 080502 ;

摘要：

Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated by X-ray photoelectron spectroscopy (XPS),Fourier transformation-infrared absorption spectroscopy (FTIR),Raman spectroscopy,cross-sectional transmission electron microscopy (XTEM),Rutherford backscattering spectroscopy (RBS).X-ray diffraction analysis (XRD) and Vickers microhardness measurement.The results show that the buried carbon nitride CN> layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film.Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C3N4 layer as N+ ions are implanted into carbon.A good agreement between experimental measurements and IRIS simulation is found.

引用

页码：404 / 411

页数：8

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