Effects of precursor solution concentration on dielectric properties of (Pb,La)(Zr,Ti)O3 antiferroelectric thick films by sol-gel processing

被引：0

作者：

吕永博 ^{[1
]}

郭茂香 ^{[1
]}

关新锋 ^{[1
]}

丑修建 ^{[1
]}

张文栋 ^{[1
]}

机构：

[1] Key Laboratory of Instrumentation Science &Dynamic Measurement(North University of China),Ministry of Education

来源：

JournalofMeasurementScienceandInstrumentation | 2013年 / 4卷 / 03期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

engineering ceramics; precursor solution concentration; microstructure; antiferroelectric thick film;

D O I：

暂无

中图分类号：

TM27 [磁性材料、铁氧体];

学科分类号：

0805 ; 080502 ; 080801 ;

摘要：

Pb0.97La0.02Zr0.95Ti0.05O3(PLZT)antiferroelectric thick films derived from different precursor solution concentrations are prepared on platinized silicon substrates by sol-gel processing.The films present polycrystalline perovskite structure with a(100)preferred orientation by X-ray diffraction(XRD)analysis.The antiferroelectricity of the films is confirmed by the double hysteresis behaviors of polarization and double-bufferfly response of dielectric constant under the applied electrical field.Antiferroelectric properties and dielectric constant are improved while the polarization characteristic values are reduced with the increase of precursor solution concentration.The films at higher precursor solution concentration exhibit excellent dielectric properties.

引用

页码：294 / 298

页数：5

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