Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates

被引：1
|
作者：
JIN Rui-min
机构：
来源：
Semiconductor Photonics and Technology | 2006年 / 01期
关键词：
PECVD; A-Si: H film; Furnace annealing; Rapid thermal annealing; Grain size;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing(RTA), respectively. From the Raman spectra, X-ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30nm is obtained by both techniques.
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收藏
页码：15 / 17 +29
页数：4
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